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3D quantum Hall effect of Fermi arcs in topological semimetals

机译:拓扑半金属中费米弧的三维量子霍尔效应

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摘要

The quantum Hall effect is usually observed in 2D systems. We show that theFermi arcs can give rise to a distinctive 3D quantum Hall effect in topologicalsemimetals. Because of the topological constraint, the Fermi arc at a singlesurface has an open Fermi surface, which cannot host the quantum Hall effect.Via a "wormhole" tunneling assisted by the Weyl nodes, the Fermi arcs atopposite surfaces can form a complete Fermi loop and support the quantum Halleffect. The edge states of the Fermi arcs show a unique 3D distribution, givingan example of (d-2)-dimensional boundary states. This is distinctly differentfrom the surface-state quantum Hall effect from a single surface of topologicalinsulator. As the Fermi energy sweeps through the Weyl nodes, the sheet Hallconductivity evolves from the 1/B dependence to quantized plateaus at the Weylnodes. This behavior can be realized by tuning gate voltages in a slab oftopological semimetal, such as the TaAs family, Cd$_3$As$_2$, or Na$_3$Bi. Thiswork will be instructive not only for searching transport signatures of theFermi arcs but also for exploring novel electron gases in other topologicalphases of matter.
机译:通常在2D系统中观察到量子霍尔效应。我们证明了费米弧能在拓扑半金属中产生独特的3D量子霍尔效应。由于拓扑约束,在单个表面上的费米弧具有开放的费米表面,无法容纳量子霍尔效应。通过在Weyl节点的辅助下的“虫洞”隧穿,在费米弧的顶面上可以形成完整的费米环,并且支持量子霍尔效应。费米弧的边缘状态显示出唯一的3D分布,给出了(d-2)维边界状态的示例。这与拓扑绝缘子的单个表面的表面状态量子霍尔效应明显不同。当费米能量扫过Weyl节点时,薄层霍尔电导率从1 / B依赖关系演变为Weylnodes处的量化平稳。此行为可以通过调整拓扑半金属板(例如TaAs族,Cd $ _3 $ As $ _2 $或Na $ _3 $ Bi)中的栅极电压来实现。这项工作不仅对寻找费米弧的传输特征具有指导意义,而且对探索物质的其他拓扑相中的新型电子气也将具有指导意义。

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